Effects of Interlayer Coupling on Hot‐Carrier Dynamics in Graphene‐Derived van der Waals Heterostructures-Reference-Cited by-同舟云学术

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Effects of Interlayer Coupling on Hot‐Carrier Dynamics in Graphene‐Derived van der Waals Heterostructures

Published:2017-03-24 Issue:15 Volume:5 Page:1600914
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Narang Prineha¹,Zhao Litao²,Claybrook Steven³,Sundararaman Ravishankar²³

Affiliation:

1. Faculty of Arts and Sciences Harvard University Cambridge MA 02138 USA

2. Department of Materials Science and Engineering Rensselaer Polytechnic Institute Troy NY 12180 USA

3. Department of Physics Applied Physics and Astronomy Rensselaer Polytechnic Institute Troy NY 12180 USA

Funder

Northrop Grumman

Center for the Environment, Harvard University

U.S. Department of Energy

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.201600914

Reference42 articles.

1. The electronic properties of graphene

2. Electric Field Effect in Atomically Thin Carbon Films

3. The rise of graphene

4. Boron nitride substrates for high-quality graphene electronics

5. Substrate-induced band gap in graphene on hexagonal boron nitride:Ab initiodensity functional calculations

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