First‐Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: The Example of Yellow Luminance by GaN: C N +O N and GaN:C N-Reference-Cited by-同舟云学术

First‐Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: The Example of Yellow Luminance by GaN: C N +O N and GaN:C N

Published:2017-09-12 Issue:21 Volume:5 Page:1700404
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Zhang Hai‐Shan¹²,Shi Lin¹,Yang Xiao‐Bao²,Zhao Yu‐Jun²,Xu Ke¹³,Wang Lin‐Wang⁴

Affiliation:

1. Suzhou Institute of Nano‐Tech and Nano‐Bionics Chinese Academy of Sciences Suzhou 215123 P. R. China

2. Department of Physics and Key Laboratory of Advanced Energy Storage Materials of Guangdong Province South China University of Technology Guangzhou 510640 P. R. China

3. Suzhou Nanowin Science and Technology Co., Ltd. Suzhou 215123 P. R. China

4. Materials Sciences Division Lawrence Berkeley National Laboratory One Cyclotron Road, Mail Stop 66 Berkeley CA 94720 USA

Funder

National Natural Science Foundation of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

U.S. Department of Energy

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.201700404

Reference46 articles.

1. Donor-acceptor pair recombination in GaN

2. Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers

3. Fundamental energy gap of GaN from photoluminescence excitation spectra

4. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

5. High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

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