Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes
Author:
Affiliation:
1. SKLSM, Institute of Semiconductors; Chinese Academy of Science; Beijing 100083 China
2. KLMM; Harbin Institute of Technology; No. 2 Yi Kuang Street Harbin 150080 China
Funder
“973 Program”
NSFC
Publisher
Wiley
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/adom.201500190/fullpdf
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