Boosting the Photoluminescence of Monolayer MoS2 on High-Density Nanodimer Arrays with Sub-10 nm Gap-Reference-Cited by-同舟云学术

Boosting the Photoluminescence of Monolayer MoS2 on High-Density Nanodimer Arrays with Sub-10 nm Gap

Published:2017-12-18 Issue:2 Volume:6 Page:1700984
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Hao Qi¹^ORCID,Pang Jinbo²,Zhang Yang¹³,Wang Jiawei¹,Ma Libo¹,Schmidt Oliver G.¹⁴

Affiliation:

1. Institute for Integrative Nanosciences; Leibniz IFW Dresden; Helmholtzstraße 20 01069 Dresden Germany

2. Institute for Complex Materials (IKM); Leibniz IFW Dresden; Helmholtzstraße 20 01069 Dresden Germany

3. Key Laboratory of Optoelectronic Information Science and Technology; Ministry of Education of China; Institute of Modern Optics; Nankai University; Tianjin 300350 China

4. Material Systems for Nanoelectronics; Technische Universität Chemnitz; Reichenhainer Str. 70 09107 Chemnitz Germany

Funder

Alexander von Humboldt-Stiftung

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference78 articles.

1. Anomalous Lattice Vibrations of Single- and Few-Layer MoS2

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Emerging Photoluminescence in Monolayer MoS2

4. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

5. Polaritons in layered two-dimensional materials

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