ZnO p-n Homojunction Random Laser Diode Based on Nitrogen-Doped p-type Nanowires-Reference-Cited by-同舟云学术

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ZnO p-n Homojunction Random Laser Diode Based on Nitrogen-Doped p-type Nanowires

Published:2013-02 Issue:2 Volume:1 Page:179-185
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Huang Jian¹,Chu Sheng¹,Kong Jieying¹,Zhang Long²,Schwarz Casey M.³,Wang Guoping¹,Chernyak Leonid³,Chen Zhanghai²,Liu Jianlin¹

Affiliation:

1. Quantum Structures Laboratory Department of Electrical Engineering; University of California at Riverside; Riverside, CA; 92521; USA

2. Laboratory of Advanced Materials; Department of Physics Fudan University; Shanghai; 200433; China

3. Department of Physics; University of Central Florida; Orlando; FL; 32816; USA

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference56 articles.

1. The physics and applications of random lasers

2. A temperature-tunable random laser

3. Laser action in polymeric gain media containing scattering particles

4. Random laser spectroscopy for nanoscale perturbation sensing

5. Random lasing in human tissues

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