Narrow‐Band QD‐Enhanced PIN Metal‐Oxide Heterostructure Phototransistor with the Assistance of Printing Processes-Reference-Cited by-同舟云学术

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Narrow‐Band QD‐Enhanced PIN Metal‐Oxide Heterostructure Phototransistor with the Assistance of Printing Processes

Published:2019-12-18 Issue:4 Volume:8 Page:1901472
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Adv. Optical Mater.

Author:

Liu Xiang¹^ORCID,Zhou Wenxing¹,Tao Yuan¹,Mao Lei¹,Chang Jianhua¹,Hu Hai²³,Li Chi²,Dai Qing²

Affiliation:

1. School of Electronics and Information TechnologyNanjing University of Information Science and Technology Nanjing 210096 China

2. CAS Center for Excellence in NanoscienceNational Center for Nanoscience and Technology Beijing 10010 China

3. University of Chinese Academy of Sciences Beijing 10049 China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.201901472

Reference39 articles.

1. Metal oxides for optoelectronic applications

2. High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p–n Heterojunction

3. All-Inorganic Perovskite Nanowires–InGaZnO Heterojunction for High-Performance Ultraviolet–Visible Photodetectors

4. How we made the IGZO transistor

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1. Printed quantum dot photodetectors for applications from the high-energy to the infrared region;Nano Energy;2024-06

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3. New Approach to Low-Power-Consumption, High-Performance Photodetectors Enabled by Nanowire Source-Gated Transistors;Nano Letters;2022-11-29

4. Rhodamine 6G and phloxine B as photosensitizers for inkjet-printed indium oxide phototransistors;Journal of Materials Chemistry C;2022

5. Bifunctional Spatiotemporal Metasurfaces for Incident Angle‐Tunable and Ultrafast Optically Switchable Electromagnetically Induced Transparency;Small;2021-04-10

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