Soluble Direct-Band-Gap Semiconductors LiAsS2and NaAsS2: Large Electronic Structure Effects from Weak As⋅⋅⋅S Interactions and Strong Nonlinear Optical Response-Reference-Cited by-同舟云学术

Soluble Direct-Band-Gap Semiconductors LiAsS2and NaAsS2: Large Electronic Structure Effects from Weak As⋅⋅⋅S Interactions and Strong Nonlinear Optical Response

Published:2008-09-29 Issue:41 Volume:47 Page:7828-7832
ISSN:1433-7851
Container-title:Angewandte Chemie International Edition
language:en
Short-container-title:Angew. Chem. Int. Ed.

Author:

Bera Tarun K.,Song Jung-Hwan,Freeman Arthur J.,Jang Joon I.,Ketterson John B.,Kanatzidis Mercouri G.

Publisher

Wiley

Subject

General Chemistry,Catalysis

Reference67 articles.

1. α- and β-A2Hg3M2S8 (A = K, Rb; M = Ge, Sn): Polar Quaternary Chalcogenides with Strong Nonlinear Optical Response

2. Helical Polymer 1/∞[P2Se62-]: Strong Second Harmonic Generation Response and Phase-Change Properties of Its K and Rb Salts

3. Optical, vibrational, thermal, electrical, damage, and phase-matching properties of lithium thioindate

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