Non-Aqueous Routes to Metal Oxide Thin Films by Atomic Layer Deposition
Author:
Publisher
Wiley
Subject
General Chemistry,Catalysis
Reference32 articles.
1. High dielectric constant gate oxides for metal oxide Si transistors
2. High-κ gate dielectrics: Current status and materials properties considerations
3. Atomic layer deposition (ALD): from precursors to thin film structures
4. Chemie der Atomlagenabscheidung (Atomic Layer Deposition): jüngste Entwicklungen
5. Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges
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