Composition and growth of anodic and thermal oxides on InP and GaAs-Reference-Cited by-同舟云学术

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Composition and growth of anodic and thermal oxides on InP and GaAs

Published:2002 Issue:1 Volume:34 Page:481-484
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Pakes A.,Skeldon P.,Thompson G. E.,Hussey R. J.,Moisa S.,Sproule G. I.,Landheer D.,Graham M. J.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference14 articles.

1. Physics and Chemistry of III-V Compound Semiconductor Interfaces. Plenum Press: New York, 1985.

2. Anodic Oxidation of GaAs in Mixed Solutions of Glycol and Water

3. On the nature of oxides on InP surfaces

4. On the chemistry of passivated oxide–InP interfaces

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1. Controlling Catalyst–Semiconductor Contacts: Interfacial Charge Separation in p-InP Photocathodes;ACS Energy Letters;2022-01-03

2. Novel failure mechanism of nanoscale mesa‐type avalanche photodiodes under harsh environmental stresses;IET Nanodielectrics;2021-02-21

3. Photoanodic oxidation of InP in acid solution and its surface chemistry: On the interplay of photons, protons and hydrodynamics;Electrochimica Acta;2020-11

4. Room temperature oxidation of GaAs(110) using high translational kinetic energy molecular beams of O2 visualized by STM;Surface Science;2020-02

5. Photodegradation of Si-doped GaAs nanowire;RSC Advances;2019

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