An analytic drain current model for long-channel undoped gate stack surrounding-gate MOSFETs including interface fixed charges
Author:
Affiliation:
1. School of Computer Science and Engineering; Northwestern Polytechnical University; Xi'an 710072 China
2. School of Software and Microelectronics; Northwestern Polytechnical University; Xi'an 710072 China
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/jnm.1900/fullpdf
Reference20 articles.
1. Analytic channel potential solution to the undoped surrounding-gate MOSFETs;He;Solid State Electron,2007
2. Analytical threshold voltage model for cylindrical surrounding-gate MOSFET with electrically induced source/drain extensions;Li;Microelectron Reliab,2011
3. Analytical threshold model for nanoscale cylindrical surrounding-gate-metal-oxide semiconductor field effect transistor with high-k gate dielectric and tri-material gate stack;Li;Jpn J Appl Phys,2010
4. Continuous analytic I-V model for surrounding-gate MOSFETs;Jimenez;IEEE Electron Dev Lett,2004
5. Analytical threshold voltage model including effective conducting path effect (ECPE) for surrounding-gate MOSFETs (SGMOSFETs) with localized charges;Yu;IEEE Trans Electron Dev,2010
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