Affiliation:
1. Beijing BOE Optoelectronics Technology CO., LTD Beijing China
2. Beijing BOE Sensor Technology CO., LTD Beijing China
Abstract
Quantum dots have been rapidly developed in the display field, especially as photoluminescent color conversion layers. At the same time, quantum dots have also made increasing research progress in the detection field. We reported a short‐wave infrared sensor based on colloidal quantum dot technology. The photosensitive layer of the sensor uses HgTe colloidal quantum dot material. The detection band is 0.9~1.7um, the resolution is 1280*1024, and the pixel pitch is 15um. Colloidal quantum dot short‐wave infrared sensors get rid of the limitations of the indium pillar flip‐chip bonding process of traditional indium gallium arsenide CMOS short‐wave infrared focal plane sensors. The preparation process is simple, the yield is higher, and the cost is low. Based on the colloidal quantum dot shortwave infrared sensor, we implemented a shortwave infrared camera and characterized its performance parameters, and then we successfully captured shortwave infrared images through the shortwave infrared camera.