28‐5: Late‐News Paper: Investigation on Enhanced Performance of All†solution Inverted Quantum Dot Light Emitting Diode via Changing a Solvent

Author:

Kim Jeong-Beom1,Yoo Jae-In1,Kim Hyo-Bin2,Jang Jincheol3,Song Jang-Kun1

Affiliation:

1. Department of Electrical and Computer Engineering Sungkyunkwan University Suwon, Gyeonggi-do South Korea 16419

2. Department of Display Convergence Engineering Sungkyunkwan University Suwon, Gyeonggi-do South Korea 16419

3. Department of semiconductor and Display Engineering Sungkyunkwan University Suwon, Gyeonggi-do South Korea 16419

Abstract

In inverted quantum‐dot light‐emitting‐diodes (QD‐LED), it is important to use orthogonal solvent for hole‐transport layer(HTL). In addition, modulating work function of each layer is good way to enhance carrier injection barrier. In this research, we confirmed the viability of usage of a solvent, named gamma‐valerolactone (GVL) for forming hole transport layer (HTL). By using the solvent, current density, luminance, roll‐off characteristics were enhanced, and highest occupied molecular orbital (HOMO) level was changed, which can enhance the hole injection.

Publisher

Wiley

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