XPS and SIMS depth profiling of chlorine in high-temperature oxynitrides-Reference-Cited by-同舟云学术

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XPS and SIMS depth profiling of chlorine in high-temperature oxynitrides

Published:2002 Issue:1 Volume:34 Page:271-275
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Vanzetti L.,Bersani M.,Sbetti M.,Iacob E.,Giubertoni D.,Barozzi M.,Zonca R.,Crivelli B.,Carpanese C.,Zanderigo F.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference16 articles.

1. High Temperature Oxide (HTO) for non volatile memories applications

2. Simplified 0.35-μm flash EEPROM process using high-temperature oxide (HTO) deposited by LPCVD as interpoly dielectrics and peripheral transistors gate oxide

3. Charge trap generation in LPCVD oxides under high field stressing

4. Gate Dielectrics and MOS ULSIs. Springer-Verlag: Berlin, 1997.

5. Effects of Wet Chemistry Pre-gate Clean Strategies on the Organic Contamination of Gate Oxides for Metal-Oxide-Semiconductor Field Effect Transistor

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current Literature in Journal of Mass Spectrometry;Journal of Mass Spectrometry;2003-01

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