A highly tunable microwave oscillator based on MTJ STO technology
Author:
Affiliation:
1. School of Information and Communication Technology; KTH Royal Institute of Technology; Electrum 229, Isafjordsgatan 22 Kista Sweden
2. Department of Physics; University of Gothenburg; Göteborg Sweden
3. NanOsc AB; Kista Sweden
Funder
Swedish Research Council (VR)
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/mop.28511/fullpdf
Reference6 articles.
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2. , Bias dependence of perpendicular spin torque and of free-and fixed-layer eigenmodes in MgO-based nanopillars;Muduli;Phys Rev B,2011
3. L. Fanori P. Andreani A 2.5-to-3.3 GHz CMOS class-D VCO 2013 346 347
4. A 3.1-10.6-GHz current-reused CMOS ultra-wideband low-noise amplifier using self-forward body bias and forward combining techniques;Wu;Microwave Opt Technol Lett.,2013
5. T. Chen S. Rodriguez E. Alarcon A. Rusu A 2 GHz-8.7 GHz wideband Balun-LNA with noise cancellation and gain boosting 2012 59 62
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