Substrate‐Dependent Anisotropy and Damping in Epitaxial Bismuth Yttrium Iron Garnet Thin Films

Author:

Fakhrul Takian12ORCID,Khurana Bharat1,Nembach Hans Toya34,Shaw Justin M.5,Fan Yabin16,Riley Grant A.37,Liu Luqiao6,Ross Caroline A.1

Affiliation:

1. Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA

2. Department of Materials and Metallurgical Engineering Bangladesh University of Engineering and Technology Dhaka 1000 Bangladesh

3. Associate, Physical Measurement Laboratory National Institute of Standards and Technology Boulder CO 80305 USA

4. Department of Physics University of Colorado Boulder Boulder CO 80309 USA

5. National Institute of Standards and Technology Boulder CO 80305 USA

6. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA 02139 USA

7. Center for Memory and Recording Research University of California‐San Diego La Jolla CA 92093 USA

Abstract

AbstractIron garnets that combine robust perpendicular magnetic anisotropy (PMA) with low Gilbert damping are desirable for studies of magnetization dynamics as well as spintronic device development. This paper reports the magnetic properties of low‐damping bismuth‐substituted iron garnet thin films (Bi0.8Y2.2Fe5O12) grown on a series of single‐crystal gallium garnet substrates. The anisotropy is dominated by magnetoelastic and growth‐induced contributions. Both stripe and triangular domains form during field cycling of PMA films, with triangular domains evident in films with higher PMA. Ferromagnetic resonance measurements show damping as low as 1.3 × 10−4 with linewidths of 2.7 to 5.0 mT. The lower bound for the spin‐mixing conductance of BiYIG/Pt bilayers is similar to that of other iron garnet/Pt bilayers.

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

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