Alkoxysilane‐Treated SnO2 Interlayer for Energy Band Alignment of SnO2 Electron Injection Layer in Inverted Perovskite Light‐Emitting Diodes

Abstract

AbstractEfficient inverted perovskite light‐emitting diodes (PeLEDs) are demonstrated by the introduction of tetraethyl orthosilicate (TEOS)‐incorporated tin oxide (SnO2) interlayer between the SnO2 electron injection layer and the perovskite emission layer. The TEOS incorporation into the SnO2 solution spontaneously converts it to a SiO2–SnO2 composite colloidal solution with a wide band gap, thermal stability, transparency, and chemical stability toward perovskite. The TEOS‐incorporated SnO2 interlayer effectively restricts the charge transfer from perovskite into SnO2 and promotes electron injection from SnO2 into perovskite due to the shift toward favorable energy band alignment. In addition, the TEOS‐treated interlayer balances the electron injection rate and the hole injection rate, thereby facilitating radiative recombination of the charge carriers injected into perovskite. As a result, the inverted PeLEDs exhibit significantly improved performance of 33 996 cd m−2 luminance, 9.99% of external quantum efficiency, and 44.83 cd A−1 of current efficiency.