Transparent and Unipolar Nonvolatile Memory Using 2D Vertically Stacked Layered Double Hydroxide-Reference-Cited by-同舟云学术

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Transparent and Unipolar Nonvolatile Memory Using 2D Vertically Stacked Layered Double Hydroxide

Published:2021-03-24 Issue:10 Volume:8 Page:2001990
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Cho Haein¹,Jeon Chan‐Woo²,On Ba Da²,Park Il‐Kyu²,Choi Sanghyeon¹,Jang Jingon¹,Wang Gunuk¹³^ORCID

Affiliation:

1. KU‐KIST Graduate School of Converging Science and Technology Korea University Seoul 02841 Republic of Korea

2. Department of Materials Science and Engineering Seoul National University of Science and Technology Seoul 01811 Republic of Korea

3. Department of Integrative Energy Engineering Korea University Seoul 02841 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202001990

Reference52 articles.

1. Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control

2. A subthermionic tunnel field-effect transistor with an atomically thin channel

3. Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications

4. Synaptic Barristor Based on Phase‐Engineered 2D Heterostructures

5. Intrinsic Piezoelectricity in Two-Dimensional Materials

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resistive switching of two-dimensional NiAl-layered double hydroxides and memory logical functions;Journal of Alloys and Compounds;2023-02

2. Resistive switching random access memory based on Sn-incorporated Cs(Pb_xSn_1-x)Br₃ perovskite thin films;J CERAM PROCESS RES;2022

3. Reconstruction and intercalating anion exchange of ZnAl-layered double hydroxide;Ceramics International;2022-02

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