Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications-Reference-Cited by-同舟云学术

Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications

Published:2022-02-06 Issue:9 Volume:9 Page:2102488
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Lee Kookjin¹²^ORCID,Ji Hyunjin³,Kim Yanghee⁴,Kaczer Ben¹,Lee Hyebin⁵,Ahn Jae‐Pyoung⁶,Choi Junhee⁷,Grill Alexander¹,Panarella Luca¹⁸,Smets Quentin¹,Verreck Devin¹,Van Beek Simon¹,Chasin Adrian¹,Linten Dimitri¹,Na Junhong⁹,Lee Jae Woo¹⁰,De Wolf Ingrid¹²,Kim Gyu‐Tae¹¹

Affiliation:

1. imec Leuven 3001 Belgium

2. Department of Materials Science KU Leuven Leuven 3001 Belgium

3. School of Electrical Engineering University of Ulsan Ulsan 44610 Republic of Korea

4. Advanced Analysis Center Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea

5. Samsung Electronics Co. Ltd 1 Samsung‐ro Yongin‐si Gyeonggi‐do 17113 Republic of Korea

6. Research Resources Division Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea

7. Korea Research Institute for defense Technology planning and advancement 420 Dongjin‐ro Jinju‐si Gyeongsangnam‐do 52851 Republic of Korea

8. Department of Physics and Astronomy KU Leuven Leuven 3001 Belgium

9. Department of Electrical Engineering Kyungnam University Changwon 51767 South Korea

10. Interdisciplinary Program for Artificial Intelligence Smart Convergence Technology Korea University Sejong 30019 Republic of Korea

11. School of Electrical Engineering Korea University 145 Anam‐ro, Seongbuk‐gu Seoul 02841 Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Education

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202102488

Reference49 articles.

1. Electron and Hole Mobilities in Single-Layer WSe2

2. Mechanical and Electronic Properties of MoS2 Nanoribbons and Their Defects

3. Mono- and Bilayer WS2 Light-Emitting Transistors

4. Electrical Transport Properties of Single-Layer WS2

5. Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications

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