Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties-Reference-Cited by-同舟云学术

Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties

Published:2020-08-26 Issue:20 Volume:7 Page:2000957
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Holovský Jakub¹²^ORCID,Martín De Nicolás Silvia³,De Wolf Stefaan⁴^ORCID,Ballif Christophe³⁵

Affiliation:

1. Centre for Advanced Photovoltaics FEE, CTU in Prague Technická 2 Prague 166 27 Czech Republic

2. Institute of Physics of the Czech Academy of Sciences Cukrovarnická 10 Prague 162 00 Czech Republic

3. Institute of Microengineering (IMT) Photovoltaic and Thin‐Film Electronics Laboratory École Polytechnique Fédérale de Lausanne (EPFL) Rue de la Maladière 71b Neuchâtel 2002 Switzerland

4. King Abdullah University of Science and Technology (KAUST) KAUST Solar Center (KSC) Thuwal 23955‐6900 Saudi Arabia

5. CSEM PV‐Center Jaquet‐Droz 1 Neuchâtel 2002 Switzerland

Funder

Grantová Agentura České Republiky

Ministerstvo Školství, Mládeže a Tělovýchovy

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202000957

Reference48 articles.

1. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%

2. Passivating contacts for crystalline silicon solar cells

3. Enhanced optical path and electron diffusion length enable high-efficiency perovskite tandems

4. Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

5. Fully textured monolithic perovskite/silicon tandem solar cells with 25.2% power conversion efficiency

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