Erbium‐Doped WS 2 with Down‐ and Up‐Conversion Photoluminescence Integrated on Silicon for Heterojunction Infrared Photodetection

Author:

Li Qiuguo1,Rao Hao2,Mei Haijuan1,Zhao Zhengting1,Gong Weiping1,Camposeo Andrea3,Pisignano Dario34,Yang Xianguang2ORCID

Affiliation:

1. Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices Huizhou University Huizhou Guangdong 516001 P. R. China

2. Institute of Nanophotonics Jinan University Guangzhou 511443 P. R. China

3. NEST Istituto Nanoscienze‐CNR and Scuola Normale Superiore Piazza S. Silvestro 12 Pisa I‐56127 Italy

4. Dipartimento di Fisica Università di Pisa Largo B. Pontecorvo 3 Pisa I‐56127 Italy

Funder

National Natural Science Foundation of China

European Research Council

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

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