Affiliation:
1. Henan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Materials Physics Ministry of Education School of Physics and Microelectronics Zhengzhou University Zhengzhou 450052 China
2. State Key Laboratory of High Power Semiconductor Lasers Changchun University of Science and Technology Changchun 130022 China
3. Science and Technology on Plasma Physics Laboratory Laser Fusion Research Center China Academy of Engineering Physics Mianyang 621900 China
Abstract
AbstractPhotodetectors play a crucial role in converting light signals into electrical signals and have significant applications in various fields such as communications, imaging, and sensing. However, the fabrication of a photodetector is a complex process that involves precise control of surface preparation, lithography, and deposition techniques. Here the study demonstrates that GaN/Ga2O3 heterojunctions can be fabricated utilizing laser processing to transform the surface of GaN into Ga2O3. The GaN/Ga2O3 heterojunctions exhibit good reproducibility, uniformity, and ability to operate under zero bias, with a responsivity of 110.22 mA W−1, a detection rate of 5.56 × 1011 jones, and an external quantum efficiency of 42.34%. Moreover, an 8 × 8 photodetector array based on GaN/Ga2O3 heterojunction is fabricated via laser writing and is demonstrated to have ultraviolet imaging capabilities. This report presents the pioneering fabrication of a photodetector array using laser writing. The findings offer a versatile and scalable approach for the production of large‐area heterojunction photodetector arrays.
Funder
National Natural Science Foundation of China
Subject
Mechanical Engineering,Mechanics of Materials
Cited by
6 articles.
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