Solid State Excitation‐Emission Spectroscopy for the Non‐Destructive Analysis of Band‐Gap & Defect States in Inorganic and Organic Semiconductors-Reference-Cited by-同舟云学术

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Solid State Excitation‐Emission Spectroscopy for the Non‐Destructive Analysis of Band‐Gap & Defect States in Inorganic and Organic Semiconductors

Published:2022-12 Issue:3 Volume:10 Page:
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Oliver Daniel J.¹^ORCID,Volkov Victor V.¹^ORCID,Perry Carole C.¹^ORCID

Affiliation:

1. Interdisciplinary Biomedical Research Centre School of Science and Technology Nottingham Trent University Clifton Lane Nottingham NG11 8NS UK

Funder

Air Force Office of Scientific Research

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202202048

Reference48 articles.

1. International Telecommunications Union Key ICT Indicators for Developed and Developing Countries and the World (Totals and Penetration Rates) 2019.

2. N.Dronavalli US7256622B2 2007.

3. I. E.Magdo S.Magdo US4005471A 1977.

4. D. F.Ciccolella J. H.Forster R. L.Rulison US3067485A 1962.

5. J. R.Biard G. E.Pittman Texas Instruments Inc US3293513A 1966.

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