Affiliation:
1. School of Physics and Optoelectronic Engineering Yangtze University 1 Xueyuan Road Jingzhou 434023 China
2. Shenzhen Institute of Advanced Electronic Materials Shenzhen Institute of Advanced Technology Chinese Academy of Sciences No.4‐2‐13, Longhengsi Road, Shenzhen Baoan 518055 China
Abstract
AbstractThe contact resistivity originating from the metal–semiconductor interface is a crucial factor for conversion efficiency of thermoelectric films devices. Due to anisotropic nature of state‐of‐art Bi2Te3 films, the contact resistivity also needs to match with the different orientations in/out‐plane film configurations. Here, a series of bismuth telluride (Bi2Te3) films with different orientations are deposited, and the contact resistivity between Ti/Cr/Cu and Bi2Te3‐based films is studied in detail. The increased (00l) orientation can effectively reduce the contact resistivity mainly due to the enhanced Tunneling effect. Finally, a low contact resistivity of 0.84 µΩ cm2 is observed in highly (00l)‐orientated Bi2Te3 film in contact with Cr. This work provides an effective method to control contact resistivity by adjusting the orientation of film, and also provides guidance on how to further improve the performance of thin film‐TEDs with different configurations.
Funder
Postdoctoral Research Foundation of China
National Natural Science Foundation of China
Natural Science Foundation of Guangdong Province
Natural Science Foundation of Shenzhen Municipality