Enhanced Intrinsic Voltage Gain in Artificially Stacked Bilayer CVD Graphene Field Effect Transistors-Reference-Cited by-同舟云学术

Enhanced Intrinsic Voltage Gain in Artificially Stacked Bilayer CVD Graphene Field Effect Transistors

Published:2017-09-20 Issue:11 Volume:529 Page:1700106
ISSN:0003-3804
Container-title:Annalen der Physik
language:en
Short-container-title:ANNALEN DER PHYSIK

Author:

Pandey Himadri¹²,Aguirre-Morales Jorge-Daniel³,Kataria Satender¹²,Fregonese Sebastien³,Passi Vikram²⁴,Iannazzo Mario⁵,Zimmer Thomas³,Alarcon Eduard⁵,Lemme Max C.¹²⁴^ORCID

Affiliation:

1. RWTH Aachen University; Chair for Electronic Devices; Otto-Blumenthal-Str. 2 52074 Aachen Germany

2. University of Siegen; School of Science and Technology; Hölderlinstr. 3 57076 Siegen Germany

3. IMS Laboratory; Centre National de la Recherche Scientifique; University of Bordeaux; Talence 33415 France

4. AMO GmbH; Advanced Microelectronics Center Aachen; Otto-Blumenthal-Str. 25 52074 Aachen Germany

5. Technical University of Catalonia; Department of Electronics Engineering, UPC; 08034 Barcelona Spain

Funder

HEA2D project

Ministerio de Ciencia e Innovación

Seventh Framework Programme

European Research Council

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

General Physics and Astronomy

Reference44 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics

3. Mobility and saturation velocity in graphene on SiO2

4. A Graphene Field-Effect Device

5. Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels

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2. Resistive Switching in Memristors Based on Artificially Stacked Chemical-Vapor-Deposited Hexagonal-Boron Nitride;IEEE SILICON NANOELE;2021

3. All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge Contacts;IEEE Transactions on Electron Devices;2018-10

4. High Voltage Gain Inverters From Artificially Stacked Bilayer CVD Graphene FETs;IEEE Electron Device Letters;2017-12