Subthreshold CMOS transistors are largely immune to magnetic field effects when operated above 11 T-Reference-Cited by-同舟云学术

Subthreshold CMOS transistors are largely immune to magnetic field effects when operated above 11 T

Published:2015-04 Issue:2 Volume:45 Page:97-105
ISSN:1552-5031
Container-title:Concepts in Magnetic Resonance Part B: Magnetic Resonance Engineering
language:en
Short-container-title:Concepts Magn. Reson.

Author:

Höfflin Jens¹,Sander Christian²,Gieschke Pascal²,Greiner Andreas¹,Korvink Jan G.³

Affiliation:

1. Department of Microsystems Engineering (IMTEK), Simulation Laboratory; University of Freiburg; Freiburg Germany

2. Department of Microsystems Engineering (IMTEK), Microsystem Materials Laboratory; University of Freiburg; Freiburg Germany

3. Institute of Microstructure Technology-IMT, Karlsruhe Institute of Technology; Karlsruhe Germany

Funder

European Research Council

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Physical and Theoretical Chemistry,Spectroscopy,Radiology Nuclear Medicine and imaging,Radiological and Ultrasound Technology

Reference18 articles.

3. Some electrical properties of silicon;Wick;Phys Rev,1908

4. Measurements of hall effect and resistivity of germanium;Pearson;Phys Rev,1947

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