P‐31: Investigation on driving backboard of electronic paper based on low‐temperature polycrystalline silicon

Abstract

In this work, we report a systematic investigation of low‐temperature polycrystalline silicon (LTPS)‐based driving backboard of electronic paper. Firstly, LTPS‐based thin film transistors (TFTs) with extremely low off‐state leakage current at a large gate‐source voltage (VGS) of 30 V were obtained through detailed explorations of low‐temperature polycrystalline silicon technology. Meanwhile, the high on‐state current of LTPS‐TFTs also meet the requirements of fast signal writing to the storage capacitor due to their extremely high field‐effect mobility (~100 cm2 /V*s), making it possible to fabricate TFT devices with relatively small width/length ratios (W/L) to minimize feed‐through to the full extent.