Planar integration of laser-recrystallized SOI-Tr's fabricated by lateral seeding process and bulk-Tr's and its application to fabrication of a solid-state image sensor-Reference-Cited by-同舟云学术

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Planar integration of laser-recrystallized SOI-Tr's fabricated by lateral seeding process and bulk-Tr's and its application to fabrication of a solid-state image sensor

Published:1989 Issue:12 Volume:72 Page:77-83
ISSN:8756-663X
Container-title:Electronics and Communications in Japan (Part II: Electronics)
language:en
Short-container-title:Electron. Comm. Jpn. Pt. II

Author:

Fujii Eiji,Senda Kohji,Emoto Fumiaki,Nakamura Akira,Uemoto Yasuhiro,Kano Gota

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy

Reference11 articles.

1. MOS transistors in beam-recrystallized polysilicon. 1982 IEEE Int. Electron Device Meeting, pp. 420–423 (Dec. 1982).

2. Recent SOI Devices. I.E.C.E. Technical Report, SDM87-167 (1988).

3. , , , , , and . Three-dimensional IC for high performance image signal processor. 1987 IEEE Int. Electron Device Meeting, pp. 111–114 (Dec. 1987).

4. , , , , and . Fabrication technology for dual 4-Kbit SRAM. 1986 IEEE Int. Electron Device Meeting, pp. 435–438 (Dec. 1986).

5. p-i-n photodiodes made in laser-recrystallized silicon-on-insulator

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