Influence of ion bombardment on a-Si: H films fabricated by plasma chemical vapor deposition-Reference-Cited by-同舟云学术

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Influence of ion bombardment on a-Si: H films fabricated by plasma chemical vapor deposition

Published:1995-02 Issue:2 Volume:78 Page:70-78
ISSN:8756-663X
Container-title:Electronics and Communications in Japan (Part II: Electronics)
language:en
Short-container-title:Electron. Comm. Jpn. Pt. II

Author:

Kato Isamu,Yoneda Toshiyuki,Matsushita Toru

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy

Reference12 articles.

1. Effects of Ions on Properties of a-Si:H Films Prepared by ECR Plasma CVD Method

2. , and . Preparation of a-Si : H Film by the Triode Glow Discharge System. Memoirs of the Faculty of Engineering, Osaka City Univ., 24, pp. 67–80 (1983).

3. Deposition of Hydrogenated Amorphous Silicon Films Using a Microwave Plasma Chemical Vapor Deposition Method with DC Bias

4. Microwave Plasma CVD System to Fabricate α-Si Thin Films out of Plasma

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