Growth process of thin chemical vapor deposition-aluminum films and its underlayer dependence—real-time monitoring of reflected light intensity at the depositing surface-Reference-Cited by-同舟云学术

Growth process of thin chemical vapor deposition-aluminum films and its underlayer dependence—real-time monitoring of reflected light intensity at the depositing surface

Published:1995-12 Issue:12 Volume:78 Page:50-58
ISSN:8756-663X
Container-title:Electronics and Communications in Japan (Part II: Electronics)
language:en
Short-container-title:Electron. Comm. Jpn. Pt. II

Author:

Kobayashi Akiko,Sekiguchi Atsushi,Okada Osamu,Hosokawa Naokichi,Sugai Kazumi,Kishida Shyunji,Okabayashi Hidekazu,Shinzawa Tsutomu,Yako Tadaaki,Kadokura Hidekimi

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy

Reference12 articles.

1. , , , , , , , , and . Adhesion layerless submicron Al damascene interconnections using novel Al-CVD. VLSI Technology Digests Technical Papers, p. 77 (1994).

2. and . Selective Chemical Vapor Deposition of Aluminum. Extended Abstracts of the 17th Conference on Solid-State Devices and Materials, pp. 755–756 (1986).

3. , , , . Subhalf-micron Aluminum Metallization Technology Using a Combination of CVD and Sputtering. Proc. of 10th International VLSI Multilevel Interconnection Conference, pp. 463–469 (1993).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Underlayer work function effect on nucleation and film morphology of chemical vapor deposited aluminum;Thin Solid Films;2002-04

2. Morphology and Hole Filling Properties of Chemically Vapor Deposited Aluminum Films Prepared from Dimethylethylamine Alane;Journal of The Electrochemical Society;2001

3. Aluminum Metallization Using a Combination of Chemical Vapor Deposition and Sputtering;Journal of The Electrochemical Society;1997-03-01