Surface-emitting lasers of low-threshold 1.3-μm GaInAsP/InP circular planar-buried heterostructure-Reference-Cited by-同舟云学术

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Surface-emitting lasers of low-threshold 1.3-μm GaInAsP/InP circular planar-buried heterostructure

Published:1994-02 Issue:2 Volume:77 Page:29-38
ISSN:8756-663X
Container-title:Electronics and Communications in Japan (Part II: Electronics)
language:en
Short-container-title:Electron. Comm. Jpn. Pt. II

Author:

Baba Toshihiko,Yogo Yukiaki,Suzuki Katsumasa,Koyama Fumio,Iga Kenichi

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy

Reference17 articles.

1. Surface emitting semiconductor lasers

2. , , , and . Room temperature pulsed oscillation of GaInAsP/InP surface-emitting laser diode with Bragg reflector grown by MOCVD. Digest of 48th Device Res. Conf., VB-II (June 1990).

3. Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers

4. , and . Low-threshold current density operation of a 1.3-μm GaInAsP/InP transmission-type surface-emitting laser. Digest of 11th Conference on Lasers and Electro-Optics. JThD5 (March 1992).

5. Room temperature pulsed operation of 1.5 mu m GaInAsP/InP vertical-cavity surface-emitting laser

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 µm;Semiconductors;1999-05

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