Present status and future of silicon crystal technology for high-performance silicon VLSI-Reference-Cited by-同舟云学术

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Present status and future of silicon crystal technology for high-performance silicon VLSI

Published:1990 Issue:3 Volume:73 Page:30-42
ISSN:8756-663X
Container-title:Electronics and Communications in Japan (Part II: Electronics)
language:en
Short-container-title:Electron. Comm. Jpn. Pt. II

Author:

Tsuya Hideki

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy

Reference45 articles.

1. , , , , and . An experimental 35-ns 1-Mb BiCMOS. 1987 IEEE ISSCC Dig. Tech. Papers, pp. 280–281 (Feb. 1987).

2. Application of the Most Advanced Logic Device—BiCMOS. 2nd AMJ Epitaxy Symposium (1988).

3. and SOI project term. SIMOX technology: From materials to VLSI circuit. FED 3-D Workshop, pp. 61–67 (May 1988).

4. , , , and . Fabrication technologies for four-layer-stacked 3-D IC's. SOI project term. SIMOX technology: From materials to VLSI circuit, pp. 147–151.

5. , , , , and . A new soft-error immune DRAM cell with a transistor on a lateral epitaxial silicon layer (TOLE cell). IEDM Tech. Dig., pp. 344–347 (Dec. 1987).

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