Development of HOT-CARRIER simulator H2-CAST and its application to LDD-Reference-Cited by-同舟云学术

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Development of HOT-CARRIER simulator H2-CAST and its application to LDD

Published:1988 Issue:5 Volume:71 Page:75-82
ISSN:8756-663X
Container-title:Electronics and Communications in Japan (Part II: Electronics)
language:en
Short-container-title:Electron. Comm. Jpn. Pt. II

Author:

Hamada Akemi,Toyabe Toru,Takeda Eiji

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy

Reference15 articles.

1. Design of ion-implanted MOSFET's with very small physical dimensions

2. et al. IGFET hot electron emission model. IEDM Tech. Dig., pp. 39–42 (1975).

3. Lucky electron model of channel hot electron emission. IEDM Tech. Dig., pp. 22–25 (1975).

4. IGFET hot electron emission model

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