A high-speed, large-capacity BiCMOS SRAM with bipolar current switch logic-Reference-Cited by-同舟云学术

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A high-speed, large-capacity BiCMOS SRAM with bipolar current switch logic

Published:1992 Issue:3 Volume:75 Page:97-108
ISSN:8756-663X
Container-title:Electronics and Communications in Japan (Part II: Electronics)
language:en
Short-container-title:Electron. Comm. Jpn. Pt. II

Author:

Douseki Takakuni,Ohmori Yasuo

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy

Reference12 articles.

1. , , , , , and . A 3.5-ns, 500-mW, 16-kbit BICMOS ECL RAM. In: ISSCC Dig. Tech. Papers, pp. 32–33 (Feb. 1989).

2. , , , , , , , and . A 5-ns, 1-Mbit ECL BiCMOS SRAM. In: ISSCC Dig. Tech. Papers, pp. 138–139 (Feb. 1990).

3. and . BiCMOS Circuit Technology for a High-Speed SRAM. In: Symp. VLSI Circuits Dig. Tech. Papers, pp. 77–78 (May 1987).

4. Fast-access BiCMOS SRAM architecture with a V/sub SS/ generator

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