P‐1.5: Dynamic Current Stress‐Induced Instabilities of a‐InGaZnO TFTs-Reference-Cited by-同舟云学术

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P‐1.5: Dynamic Current Stress‐Induced Instabilities of a‐InGaZnO TFTs

Published:2022-10 Issue:S1 Volume:53 Page:584-587
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Liu Fayang¹,Zhou Yuheng¹,Zhou Xiaoliang¹,Yang Huan¹,Xia Zhihe²,Yan Yeung Fion Sze²,Wong Man²,Kwok Hoi Sing²,Zhang Shengdong¹,LU Lei¹

Affiliation:

1. School of Electronic and Computer Engineering, Shenzhen Graduate School Peking University Shenzhen China

2. State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Hong Kong China

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.16031

Reference10 articles.

1. Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor;Xiao X.;ACS Appl. Mater. Interfaces,2018

2. Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays;Ma Qungang;IEEE J. Electron Devices Soc.,2019

3. A novel compensation pixel circuit for high bits of AM mini/micro-LED based on PWM method;Zhao B.;Energy Reports,2021

4. Origin of Electrical Instabilities in Self-Aligned Amorphous In-Ga-Zn-O Thin-Film Transistors;On Nuri;IEEE Trans. Electron Devices,2017

5. Removal of negative-bias-illumination-stress instability in amorphous-InGaZnO thin-film transistors by top-gate offset structure;Lee S.;IEEE Electron Device Lett.,2014

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