P‐1.1: Co‐sputtering‐deposited Hf‐doped ITO Thin Films for Thin Film Transistors Application
Author:
Affiliation:
1. Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument Beijing Information Science and Technology University Beijing China
2. Institute of Microelectronics Peking University Beijing China
Publisher
Wiley
Subject
General Medicine
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.16027
Reference13 articles.
1. Oxide Semiconductor Thin-Film Transistors: A review of recent advances;Fortunato E;Adv Mater.,2012
2. Remarkably high hole mobility metal-oxide thin-film transistors;Shih CW;Sci Rep.,2018
3. Metal oxide semiconductor thin-film transistors for flexible electronics;Petti L;Applied Physics Reviews,2016
4. Reliability issues of thin film transistors subject to electrostatic discharge stresses: an overview;Yan Y;Adv Elect Materials,2021
5. Nanometre-thin indium tin oxide for advanced high-performance electronics;Li S;Nat Mater.,2019
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