P‐4.5: TFT characteristic improvement of amorphous silicon by Design of Experiments

Author:

Wang Ming1,Gao YuJie1,Zhao Jian1,Liu He1,Qiao YaZheng1,Dai Yao1,Liu ZiZheng1,Chen Peng1,Guo HuiBin1

Affiliation:

1. BOE Technology Group Co., Ltd Wuhan Hubei China

Publisher

Wiley

Subject

General Medicine

Reference6 articles.

1. Recent progress of liquid crystal display technology [J];Shao X B;Chinese Journal of Liquid Crystals and Displays,2000

2. The study of the characteristics of a-Si: H TFT with thin active layer structure [J];Zhang S Q;Acta Electronic Sinica,1997

3. Improving the mobility of the amorphous silicon TFT with the new stratified structure by PECVD [J];Yu Y;Acta Physics Sinica,2013

4. Defect pool in amorphous-silicon thin-film transistors [J];Powell M J;Physical review B,1992

5. Improvement of the Electrical Characteristics of a-Si:H TFTs Using the Phosphorus Doping in the Active Layer”;Sang-Kwon Lee;Molecular Crystals and Liquid Crystals,2014

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