P‐1.9: Effect of wavelength on photoresponse characteristics of amorphous InZnO thin film transistors
Author:
Affiliation:
1. School of Electronic and Computer Engineering Peking University Shenzhen China
2. Institute of Microelectronics Peking University Beijing China
3. Active Matrix Display Beijing Engineering Research Center Beijing China
Publisher
Wiley
Subject
General Medicine
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.16035
Reference14 articles.
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3. Present status of amorphous In–Ga–Zn–O thin-film transistors;Kamiya T.;Science and Technology of Advanced Materials,2010
4. Amorphous oxide semiconductor TFTs for displays and imaging;Nathan A.;Journal of Display Technology,2014
5. 50.1: Invited Paper: Fingerprint Sensor System Based on High Mobility Oxide TFT;Zhou L.;SID Symposium Digest of Technical Papers,2021
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Physical Insight Into Multiple Gate-Voltage Dependencies of Off-State Photocurrent in Amorphous InZnO Thin-Film Transistors;IEEE Transactions on Electron Devices;2024-03
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