Scaling law for strain dependence of Raman spectra in transition‐metal dichalcogenides-Reference-Cited by-同舟云学术

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Scaling law for strain dependence of Raman spectra in transition‐metal dichalcogenides

Published:2020-06-16 Issue:8 Volume:51 Page:1353-1361
ISSN:0377-0486
Container-title:Journal of Raman Spectroscopy
language:en
Short-container-title:J Raman Spectrosc

Author:

Zhang Ye¹,Guo Huaihong¹,Sun Wei¹,Sun Hongzhi¹,Ali Sajjad²³,Zhang Zhidong²,Saito Riichiro⁴,Yang Teng²^ORCID

Affiliation:

1. College of SciencesLiaoning Shihua University Fushun China

2. Shenyang National Laboratory for Materials ScienceInstitute of Metal Research, Chinese Academy of Sciences Shenyang China

3. Department of PhysicsSouthern University of Science and Technology Shenzhen China

4. Department of PhysicsTohoku University Sendai Japan

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Spectroscopy,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jrs.5908

Reference68 articles.

1. Two-dimensional atomic crystals

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Single-layer MoS2 transistors

5. Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

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4. Exciton–Phonon Interactions in Strained Domes of Monolayer MoS2 Studied by Resonance Raman Spectroscopy;Nanomaterials;2023-10-07

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