P‐10.11: Pixelation of Nano‐LED arrays with high effective light‐emitting area ratio by ion injection: A Simulation study-Reference-Cited by-同舟云学术

P‐10.11: Pixelation of Nano‐LED arrays with high effective light‐emitting area ratio by ion injection: A Simulation study

Published:2023-04 Issue:S1 Volume:54 Page:817-819
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Ye Jinyu¹,Zhang Jiawei¹,Zhou Xiongtu¹²,Zhang Yongai¹²,Wu Chaoxing¹²,Guo Tailiang¹²,Yan Qun¹²

Affiliation:

1. School of Physics and Information Engineering Fuzhou University Fuzhou China 350108

2. Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou, Fujian China 350116

Abstract

The etch damage caused by the conventional bench-top etching process makes it difficult to produce Nano-LED devices. Recently, some scholars have studied the use of ion injection to achieve electrical isolation between pixels for the purpose of pixelation. In this paper, we focus on the distribution characteristics of ions in GaN targets to improve the effective light-emitting area ratio of devices by reducing the lateral diffusion effect of ions.

Publisher

Wiley

Subject

General Medicine

Reference10 articles.

1. High-Bandwidth InGaN Self-Powered Detector Arrays toward MIMO Visible Light Communication Based on Micro-LED Arrays

2. Prospects and challenges of mini‐LED, OLED, and micro‐LED displays

3. Matrix-Addressable Micropixellated InGaN Light-Emitting Diodes With Uniform Emission and Increased Light Output

4. Size-dependent optical-electrical characteristics of blue GaN/InGaN micro-light-emitting diodes

5. Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study