9‐1: Evaluation of X‐ray Resistance of Submicron‐Size <i>c</i> ‐Axis Aligned Crystalline‐Oxide Semiconductor-Reference-Cited by-同舟云学术

9‐1: Evaluation of X‐ray Resistance of Submicron‐Size c ‐Axis Aligned Crystalline‐Oxide Semiconductor

Published:2022-06 Issue:1 Volume:53 Page:78-81
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Tsuda Kazuki¹,Takahashi Hironobu¹,Hamada Toshiki¹,Saito Satoru¹,Baba Haruyuki¹,Takahashi Masahiro¹,Obonai Toshimitsu¹,Koezuka Junichi¹,Kunitake Hitoshi¹,Kobayashi Daisuke²,Tajima Michio²,Yamazaki Shunpei¹

Affiliation:

1. Semiconductor Energy Laboratory Co. Ltd. Kanagawa Japan

2. Japan Aerospace Exploration Agency Kanagawa Japan

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.15421

Reference9 articles.

1. Evaluation of Off-State Current Characteristics of Transistor Using Oxide Semiconductor Material, Indium–Gallium–Zinc Oxide

2. 39‐3: Invited Paper: LTPO TFT Technology for AMOLEDs †

3. Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor

4. A 48 MHz 880-nW Standby Power Normally-Off MCU with 1 Clock Full Backup and 4.69-μs Wakeup Featuring 60-nm Crystalline In–Ga–Zn Oxide BEOL-FETs

5. Electronic global shutter CMOS image sensor using oxide semiconductor FET with extremely low off-state current;Aoki T;2011 Symp. on VLSI Technology-Dig. of Tech. Papers,2011

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