Light-Intensity Dependence In The Kinetics Of N-Gap Photoelectrode Stabilization-Reference-Cited by-同舟云学术

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Light-Intensity Dependence In The Kinetics Of N-Gap Photoelectrode Stabilization

Published:2010-09-01 Issue:3 Volume:89 Page:181-186
ISSN:0037-9646
Container-title:Bulletin des Sociétés Chimiques Belges
language:en
Short-container-title:Bull. Soc. Chim. Belges

Author:

van Overmeire F.,Vanden Kerchove F.,Gomes W. P.,Cardon F.

Publisher

Wiley

Subject

General Chemistry

Reference6 articles.

1. Anodic Processes at the n- and p-Type GaP Electrodes

2. The Role of Energy Levels in Semiconductor‐Electrolyte Solar Cells

3. F. van Overmeire

4. An Examination of the Corrosion Suppression Mechanism on n‐Titanium Dioxide Photoanodes

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrochemistry of III‐V Compound Semiconductors: Dissolution Kinetics and Etching;Advances in Electrochemical Sciences and Engineering;1993-11-25

2. A comparison of anodic charge-transfer kinetics between dark p-type and illuminated n-type GaP/Fe(CN)4−16 interfaces;Journal of Electroanalytical Chemistry and Interfacial Electrochemistry;1987-04

3. Photoelectrochemical and chemical corrosion inhibition of n-type GaAs in highly concentrated iodide solutions;Journal of Electroanalytical Chemistry and Interfacial Electrochemistry;1986-09

4. Adsorption on semiconductor electrodes;Progress in Surface Science;1986-01

5. Analysis of Trapping and Recombination Effects in Photoelectrochemical Processes at Semiconductor Electrodes: Investigations at n-GaAs;Berichte der Bunsengesellschaft für physikalische Chemie;1985-04

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