1.3: An Evaluation Method of TFT Integrated Gate Driver for UHD Display
Author:
Affiliation:
1. School of Electronic and Computer Engineering; Peking University; Shenzhen China
2. Shenzhen China Star Optoelectronics Technology Co., Ltd; Guangdong China
3. Active Matrix Display Beijing Engineering Research Center; Beijing China
Funder
National Natural Science Foundation of China
Shenzhen Municipal Scientific Program
Shenzhen government competitive research
Publisher
Wiley
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/sdtp.12623/fullpdf
Reference6 articles.
1. Highly Reliable Bidirectional a-InGaZnO Thin-Film Transistor Gate Driver Circuit for High-Resolution Displays;Lin;IEEE Trans. Electron Devices,2016
2. Design of Bidirectional and Low Power Consumption Gate Driver in Amorphous Silicon Technology for TFT-LCD Application;Zheng;IEEE J. Display Technology,2013
3. A Compact Bi-Direction Scannable a-Si:H TFT Gate Driver;Liao;IEEE J. Display Technology,2015
4. Robust Gate Driver Design with Etching - Stop - Layer Type InGaZnO TFTs Using Stack Buffer Structure;Liao,2017
5. Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress;Jahinuzzaman;Appl. Phys. Lett.,2005
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