Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells-Reference-Cited by-同舟云学术

Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells

Published:2015-12-16 Issue:6 Volume:24 Page:774-780
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Rahman Mohammad Maksudur¹²,Lee Ming-Yi³,Tsai Yi-Chia³,Higo Akio⁴,Sekhar Halubai¹,Igarashi Makoto¹,Syazwan Mohd Erman¹,Hoshi Yusuke⁵,Sawano Kentarou⁶,Usami Noritaka⁵,Li Yiming³⁴,Samukawa Seiji¹²⁴

Affiliation:

1. Institute of Fluid Science; Tohoku University; Sendai Miyagi 980-8577 Japan

2. Japan Science and Technology Agency; CREST; Tokyo 102-0076 Japan

3. Department of Electrical and Computer Engineering; National Chiao Tung University; Hsinchu Taiwan

4. WPI Advanced Institute for Materials Research; Tohoku University; Sendai Miyagi 980-8577 Japan

5. Graduate School of Engineering; Nagoya University; Nagoya 464-8603 Japan

6. Research Center for Silicon Nano-Science, Advanced Research Laboratories; Tokyo City University; Tokyo 158-0082 Japan

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pip.2726/fullpdf

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4. Third generation photovoltaics: ultra-high conversion efficiency at low cost;Green;Progress in Photovoltaics: Research and Applications,2001

5. Miniband-related 1.4-1.8 µm luminescence of Ge/ Si quantum dot super lattices;Talalaev;Nanoscale Research Letter,2006

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