P‐13.8: Influences of Passivation Hole Etching on the ITO and Metal Contact for Bottom Emission AMOLED Display-Reference-Cited by-同舟云学术

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P‐13.8: Influences of Passivation Hole Etching on the ITO and Metal Contact for Bottom Emission AMOLED Display

Published:2019-09 Issue:S1 Volume:50 Page:975-978
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Fan Ying-chun¹²,Zhang Xiao-xing¹²,Im Jang-soon¹²

Affiliation:

1. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd Shenzhen Guangdong China

2. National Engineering Laboratory for AMOLED Process Technology

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.13713

Reference5 articles.

1. The impact of Deposition Rate and Hydrophobicity of Passivation Layer on The Stability of Back-Channel-Etch Amorphous InGaZnO Thin-Film Transistors;W. W.;SID 2018 DIGEST,2018

2. Stability of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors with Treatment Processes;LIN Y.-H.;The Minerals, Metals & Materials Society,2017

3. Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

4. Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

5. The impact of Deposition Rate and Hydrophobicity of Passivation Layer on The Stability of Back-Channel-Etch Amorphous InGaZnO Thin-Film Transistors;W. W.;SID 2018 DIGEST,2018

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