Effect of platinum buffer layer on the fabrication process of flexible ferroelectric epitaxial thin films

Author:

Mizuyama Tomofumi1,Nishikawa Hiroaki2ORCID

Affiliation:

1. Graduate School of Biology‐Oriented Science and Technology Kindai University Kinokawa Japan

2. Faculty of Biology‐Oriented Science and Technology Kindai University Kinokawa Japan

Abstract

AbstractEpitaxial thin films of a ferroelectric perovskite‐type oxide grown on single‐crystalline SrTiO3 (100) were transferred onto a flexible printed circuit (FPC). In the case that the thin films were directly adhered onto FPC using a copper foil double‐coated conductive adhesive tape (Cu double‐sided tape), serious cracking and exfoliation occurred during the transfer process. To avoid these damages, we have tried to insert a metal buffer layer with excellent ductility between the ferroelectric oxide thin film and the Cu double‐sided tape. The platinum buffer layer was found to be appropriate to establish a crack‐ and exfoliation‐free transfer process.

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy,Signal Processing

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