Understanding of the annealing temperature impact on ion implanted bifacial n-type solar cells to reach 20.3% efficiency
Author:
Affiliation:
1. Univ. Grenoble Alpes, INES; F-73375 Le Bourget du Lac France
2. CEA, LITEN; Department of Solar Technologies; F-73375 Le Bourget du Lac France
3. CEA, LETI; 17 rue des Martyrs 38054 Grenoble Cedex 9 France
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
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4. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon;Macdonald;Applied Physics Letters,2004
5. High Efficiency on Boron Emitter n-Type Cz Silicon Solar Cells With Industrial Process;Veschetti;IEEE Journal of Photovoltaics,2011
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