Liquinert quartz crucible for the growth of multicrystalline Si ingots-Reference-Cited by-同舟云学术

Liquinert quartz crucible for the growth of multicrystalline Si ingots

Published:2015-09 Issue:5 Volume:3 Page:419-422
ISSN:2050-0505
Container-title:Energy Science & Engineering
language:en
Short-container-title:Energy Sci Eng

Author:

Fujiwara Kozo¹,Horioka Yukichi²,Sakuragi Shiro³

Affiliation:

1. Institute for Materials Research (IMR) Tohoku University Katahira 2‐1‐1 Aoba‐ku Sendai 980‐8577 Japan

2. Frontier Technology Business Research Institute Co. Ltd. Yamazaki Umenodai 11‐9 Noda 278‐0024 Japan

3. Union Materials Inc. Oshido 1640 Tone‐machi Kitasoma‐gun, Ibaraki 300‐1602 Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan

Publisher

Wiley

Subject

General Energy,Safety, Risk, Reliability and Quality

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/ese3.90

Reference15 articles.

1. A reusable mold in directional solidification for silicon solar cells

2. Molding and directional solidification of solar-grade silicon using an insulating molten salt

3. Use of silicon oxynitride as a graphite mold releasing coating for the growth of shaped multicrystalline silicon crystals

4. Khattak C. P. andF.Schmid.Reusable crucible for silicon ingot growth. US Patent US 2004/0211496 A1.

5. Julsrud S. andT. L.Naas.Method and crucible for direct solidification of semiconductor grade multi‐crystalline silicon ingot. International Patent WO 2007/148987 A1.

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