TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM-Reference-Cited by-同舟云学术

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TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM

Published:2012-05-04 Issue:1 Volume:45 Page:394-397
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Barozzi M.¹,Iacob E.¹,van den Berg J.A.²,Reading M.A.²,Adelmann C.³,Popovici M.³,Tielens H³,Bersani M.¹

Affiliation:

1. FBK Fondazione Bruno Kessler; Via Sommarive 18 38100 Povo Trento Italy

2. Materials and Physics Centre; University of Salford; Salford M5 4WT United Kingdom

3. IMEC; Kapeldreef 75 3001 Leuven Belgium

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sia.5038/fullpdf

Reference10 articles.

1. High-k dielectrics for future generation memory devices (Invited Paper)

2. N. Menou et al Electron Devices Meeting 2008 1 4

3. High Depth Resolution Depth Profile Analysis of Ultra Thin High-κ Hf Based Films using MEIS Compared with XTEM, XRF, SE and XPS

4. Atomic Layer Deposition of Strontium Titanate Films Using Sr([sup t]Bu[sub 3]Cp)[sub 2] and Ti(OMe)[sub 4]

5. Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

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