Author:
Ogita Shouichi,Kobayashi Hirohiko,Higashi Toshio,Okazaki Niro,Aoki Osamu,Soda Haruhisa
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers
2. High power output 1.48–1.51 μm continuously graded index separate confinement strained quantum well lasers
3. 1.48- mu m high-power InGaAs/InGaAsP MQW LDs for Er-doped fiber emulsifiers
4. High‐power 1.48 μm multiple quantum well lasers with strained quaternary wells entirely grown by metalorganic vapor phase epitaxy
5. , , , , , , and , “1.48 μm High Power GaInAsP GRIN-SCH MQW LD with Circular Beam,” in Technical Digest of Fourth Optoelectronics Conference (OEC'92), Makuhari Messe, Japan, July 1992, Paper 17B2–1.
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