Tight Binding Modeling of Heterojunction Band Offsets as a Function of Pressure and Composition-Reference-Cited by-同舟云学术

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Tight Binding Modeling of Heterojunction Band Offsets as a Function of Pressure and Composition

Published:2001-01 Issue:1 Volume:223 Page:195-204
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

�nl� H.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. and Principles and Technology of MODFETs, Vols. 1 and 2, John Wiley & Sons, New York 1991.

2. Band Offsets in Semiconductor Heterojunctions

3. Extended Tight-Binding and Thermochemical Modeling of III-Nitride Heterostructures at Any Temperature and Pressure

4. Electronic Structure and the Properties of Solids, Freeman, San Francisco 1980.

5. Bond-orbital model. II

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